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| 15 10V 8V 12 6V 4.5V 5V 10 8 Vds=5V Id (A) 4V 6 3.5V Id (A) 9 6 4 125C 3 Vgs=3V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 120 2 25C 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 110 100 1.6 1.4 1.2 1 0.8 Vgs=10V Id=3.1A Rds(on) (m:) Vgs=4.5V 90 80 70 60 50 40 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Vgs=4.5V Id=2A 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 250 Id=3.1A 1.0E+01 1.0E+00 1.0E-01 125C 200 125 Rds(on) (m:) Is (A) 150 1.0E-02 25 1.0E-03 100 50 25C 1.0E-04 1.0E-05 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=15V Id=3.1A 8 Capacitance (pF) Vgs (Volts) 400 300 Ciss 6 200 Coss Crss 100 4 2 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150C Ta=25C 10.0 10Ps 1ms 0.1s 10ms 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 Power (W) 100Ps 20 Tj(max.)=150C Ta=25C 15 Id (Amps) Rds(on) limited 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 20 -10V -9V 15 -8V -6V -7V 10 Vds=-5V 8 25C -5V -Id (A) -Id (A) 6 125C 4 10 Vgs=-4.5V -4V 5 -3.5V -3V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 200 2 0 1 2 3 4 5 6 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Vgs=-10V Id=-2.7A 1.4 Rds(on) (m:) Vgs=-4.5V 150 1.2 Vgs=-4.5V Id=-2A 1 100 Vgs=-10V 50 0 1 2 3 4 5 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 300 250 Id=-2.7A 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 200 -Is (A) 125C 150 100 50 0 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-02 125C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 25C 10 Vds=-15V Id=-2.7A 8 Capacitance (pF) -Vgs (Volts) 6 4 2 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 500 400 Ciss 300 200 Coss 100 Crss 0 5 10 15 20 25 30 0 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150C Ta=25C -Id (Amps) Power (W) 10.0 Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 1ms 10Ps 20 Tj(max.)=150C Ta=25C 15 10 100Ps 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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